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Epitaxial BaTi3 films have been grown on NdGaO3 [100] substrates by reduced pressure MOCVD for the first time. The substrate temperature was 1000 °C and the total pressure was 4 Torr. Electron and x-ray diffraction measurements indicate highly textured, single phase films on the NdGaO3 substrate which are predominantly [100], with [110] also present. TEM and selected area electron diffraction (SAED) indicate two specific orientational relationships between the [110] and the [001] diffraction patterns.

High-quality YBa2Cu3O7−x films were grown in situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition (CVD) process. The metalorganic complexes M (thd)n, (thd=2,2,6,6-tetramethyl-3-5-heptanedionate; M=Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O7−x was formed in situ at a substrate temperature 680 °C. The as-deposited films exhibited a mirrorlike surface, had transition temperature Tc0≂89 K, ΔTc<1 K, and Jc (77 K)=106 A/cm2.

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