The "grain-boundary effect," which leads to a greatly reduced dc ionic conductivity due to the presence of a blocking layer in the vicinity of the grain boundaries, is studied in detail for ceria ceramics doped with various trivalent dopants (particularly Y3+, Gd3+, and La3+). The effects of porosity, of sintering time, and of dopant size and dopant concentration are investigated. Finally, it is shown that the grain-boundary effect virtually disappears when nearly silicon-free starting materials are used.
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