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The attenuation constant of interconnects fabricated in foundry and post-CMOS processing are compared up to 110 GHz. Two dielectric materials with thicknesses less than 10 microns are deposited on a lossy silicon (Si) substrate. The interlayer dielectric (ILD) from 180 nm TSMC and benzocylobutene (BCB) are used to characterize losses measured on coplanar waveguide (CPW) and grounded CPW (GCPW) at millimeter-wave (mm-wave) frequencies. CPW lines on BCB have comparable or better loss performance compared to the foundry GCPW lines at 100 GHz.

30–225 GHz coplanar waveguide (CPW) series stubs are studied in a benzocylobutene and 10‐Ω‐cm silicon stack. Truncated side grounds improve the rejection of a 230 GHz CPW band pass filter (BPF). Silicon shielding using a grounded CPW line provides 1.79 dB insertion loss for a 215 GHz BPF. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:375–380, 2014