Although the persistent photocurrent (PPC) in amorphous hydrogenated amorphous silicon (a-Si:H) is known to be dominated by dispersive recombination kinetics which produce the power low decay, [Formula: see text], where [Formula: see text] is the dispersion parameter, the reason for the occurrence of the dispersive reaction is not clear. We discuss the origin of the dispersive nature in the PPC in a-Si:H. It is shown that band edge modulation due to microscopic inhomogeneity may play an important role in the PPC dynamics.
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