Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized from GaAs1−xBix Fabry–Perot laser diodes (FP-LDs) by electrical injection, and the temperature characteristics of GaAs1−xBix FP-LDs are revealed for the first time. The characteristic temperature T0 of the GaAs0.97Bi0.03 FP-LD in the temperature range between 15 and 40 °C (T0 = 125 K) is similar to that reported for typical 0.98 µm InGaAs/GaAs LDs. The temperature coefficient of the lasing wavelength in GaAs0.97Bi0.03 FP-LDs is reduced to 0.17 nm/K, which is only 45% of that of GaAs FP-LDs.

No abstract

No abstract

In this study, we comprehensively investigated a series of bis-terpyridine isomers, n-TerPyB, as optoelectronic materials.