AbsLracLThe CuFeEz ternary mmpound with a layered crystalline structure has teen ludied. nre mmpound Cr paramagnetic in lhc temperature range IO-ZM) K Invesligation of the p ( T ) temperature dependence demonstrates the fermn character of the carrier transpon with the Molt diffusional mechanism. ?he obtained power dependences n ( T ) , R ( T ) and o ( T ) allow us LO mnclude lhal CuFeTe belongs LO the gapless semiconductors. rile temperature behaviour of n(T), R ( T ) and o(T) can be explained by examining features from the electron spectrum of CuFeTez under mndilions where the characrer of the ~a n i e r