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A three-electrode nanodiamond vacuum field emission (VFE) device with gate modulated triode characteristics is developed by integrating nanodiamond emitter with self-aligned silicon gate and anode, employing a mold transfer technique in conjunction with chemical vapor deposition of nanodiamond. Triode behavior showing emission current modulation with high current density at low operating voltages is achieved. A systematic analysis based on modified Fowler-Nordheim theory is used to analyze gate modulated VFE characteristics, confirming the triode field emission mechanism and operating principle. The realization of an efficient VFE microtriode has achieved the fundamental step for further development of vacuum integrated microelectronics.

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