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Models to account for Fowler-Nordheim tunneling and hot electron injection through silicon dioxide as well as bandto-band tunneling in silicon have been incorporated into the 2-D device simulator HFJELDS(1J. These represent all the important physical mechanism which occur during the writing of flmh EEPROM devices. The physical models have been verified by comparison with flash EEPROM devices fabricated using a 1.0 pm technology where good agreement has been obtained.

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