Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al x Ga 1-x As on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1.