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Interfaces Interfaces G 6000Interfacial Reactions in GaSb/Co Metallization Contacts During Thermal Processing. -As revealed by XRD, SEM, and TEM, interfacial reactions between Co and single crystal GaSb take place at 500°C. No ternary phases exist in the system at this temperature. The cubic CoGa and CoSb 3 phases are the dominant growing compounds in the semi-infinite bulk as well as in thin-film reaction couples, the latter intermetallic being formed next to the GaSb substrate. When the Co film is consumed by the reaction, the final configuration of the metallization layer GaSb/CoSb 3 /CoGa is achieved. This information is important in designing uniform, stable contacts for the metallization of GaSb. -(KODENTSOV*, A. A.; MARKOVSKI, S. L.; CSERHATI, C.; VAN LOO, F. J. J.; Chem. Mater. 15 (2003) 1, 218-224; Lab. Solid State Chem. Mater. Sci., COBRA Inter-Univ. Res. Inst. Commun. Technol., Eindhoven Univ. Technol., NL-5600 MB Eindhoven, Neth.; Eng.) -W. Pewestorf

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ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.