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Low temperature deposition of c-axis oriented Sr-ferrite thin films prepared by facing targets sputtering with mixture gas of Ar and Kr

M -type strontium ferrite films were prepared by radio-frequency ͑rf͒ sputtering on fused quartz substrates using different deposition conditions and were subjected to two different types of annealing treatments. The study showed that in addition to the deposition conditions such as rf power, oxygen to argon ratio in the sputtering gas, and target to substrate distance, the postdeposition annealing conditions also play an important role in determining the texture and properties of the films. The films with random orientation or with preferred c-axis orientation either normal to the film plane or in the film plane could be deposited depending on the process parameters chosen. The study carried out by depositing these films on different substrates such as Si͑100͒, Si͑111͒, sapphire͑110͒, and Gd 3 Ga 5 O 12 ͑111͒ showed that though the nature of the substrates plays a role in determining the texture and properties of the films, such effects are less dominant in comparison to the effect of deposition and annealing conditions in the case of strontium ferrite films.

The Mossbauer spectrum of the low temperature phase of Fe,O, is studied a t 4.2 and 78 K. The spectrum can be resolved in five sextets, one arising from the Fe3+ ions on the A-sites, two from the Fe3+ ions on B-sites, and two from Fe2+ ions on the B-sites. The data of quadrupole splitting and hyperfine fields are used to obtain the ground and excited electronic states of the Fez+ ions on the B-sites.Das MoDbauerspektrum der Tieftemperaturphase von Fe,O, wird bei 4,2 und 78 K untersucht. Das Spektrum 1aBt sich in fiinf Sextetts auflosen, eins, das von Fe3+-Ionen auf den A-Pliitzen herriihrt, zwei von den Fe3+-Ionen auf den B-Pliitzen und zwei von Fez+-Ionen auf den B-Pliitzen. Die Werte der Quadrupolaufspaltung und der Hyperfeinfelder werden benutzt, um den Grundzustand und die angeregten elektronischen Zustlnde der Fe2+-Ionen auf den B-PILtzen zu erhalten.

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