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The dependence of lasing wavelength on cavity length has been systemically studied in strained-layer single, double, and triple quantum-well InGaAs lasers. Lasing from the second quantized state has been observed for the first time in double and triple quantum-well lasers. A wide range (∼500 Å) wavelength switching between the first and second quantized states has been demonstrated by controlling the injection current and/or the operation temperature.

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Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.

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