InGaN epitaxial film growth has been performed on (0001) c-, ) 0 2 11 ( a-and ) 00 1 1 ( m-plane ZnO substrates by metalorganic vapor phase epitaxy in the temperature range of 550˚C -680˚C. The grown layers were confirmed to be single crystalline by X-ray diffraction.

InGaN growth has been performed on nearly lattice‐matched ZnO (0001) substrates by metalorganic vapor phase epitaxy at relatively low temperatures below 600 °C. The grown layers were confirmed to be single crystalline by X‐ray diffraction and reflection high energy electron diffraction analyses. By annealing the ZnO substrate under oxygen atmosphere prior to the growth, scratches due to polishing were completely removed, as observed by atomic force microscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

We demonstrated InxGa1‐xN epitaxial growth with InN mole fractions of x = 0.10 to 0.23 on an m‐plane ZnO substrate by metal‐organic vapor phase epitaxy. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m‐plane SiC substrate. The strain of the epilayers was investigated by X‐ray reciprocal space mapping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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