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The structural and optical properties of heterogeneous SiGe/Si multilayered films, which was prepared through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) and electrochemical anodization (ECA), have been investigated. The structural parameters of multilayer films before ECA were determined by double crystal X-ray diffraction and the simulation. The visible luminescence spectra with multiple emission peaks been detected in the temperature range from 10 K to room temperature. The origins of PL with multiple peaks were discussed in detail.

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