This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS absorber layers and CdS window layer with quantum dot size materials to achieve higher efficiency with lesser usage layer material. Also, it has been studied the effect of using semiconductors layers in quantum dots size on electric and optical properties of thin film solar cells and the effect of window and absorber layers quantum dots radii on the performance of solar cells. Finally, a thermal efficiency analysis has been investigated for explaining the importance of new structure HJQD solar cells.

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This paper presents new design of ZnO/CdS/CIGS/Mo nanocomposites thin film solar cell based on individual and multiple nanocomposites absorber layer. A theoretical analysis is presented for enhancing the efficiency and characterization of individual and multiple nanocomposites CdS/Cu (In, Ga) Se2 thin film solar cell. Moreover, this paper is achieving high efficiency with a thinner CIGS layer for reducing the direct materials usage and there by the materials costs by adding various metallic nanoparticles in CIGS absorber layer.

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