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Youth of minority race/ethnicity have increased markers of poor prognosis of type 1 diabetes at diagnosis and 3 years postdiagnosis, possibly contributing to higher risk of long-term diabetes complications compared with NHWs.

No abstract

NREL prints on paper that contains recycled content.

Gallium oxide (Ga 2 O 3 ) is an emerging ultra-wide bandgap semiconductor that has unique properties ideal for high-power, high-temperature, optoelectronic, and sensing applications and has piqued interest over the last decade. It has the potential to be technologically and economically superior to commercially available wide bandgap semiconductor materials, such as silicon carbide and gallium nitride, because its wider bandgap enables increased breakdown voltages and lower on-state resistances, and its ability to be grown from melt enable costcompetitive economics. In this study, we present a techno-economic analysis that projects the cost of 6″ β-Ga 2 O 3 wafers fabricated from crystals grown via edge-defined film-fed growth (EFG). At a manufacturing volume of 5000 wafers per month, we predict a unit cost of $320 for a 6″ EFG grown β-Ga 2 O 3 epi-wafer. We determine that, when calculated using 2021 iridium crucible costs, EFG has a 2× cost advantage compared to previously reported epi-wafers grown via the Czochralski (CZ) method. We further identify key cost parameters for 6″ β-Ga 2 O 3 epi-wafers and present cost-sensitivity analysis of their impact on the final cost.