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A novel hot-carrier programming method for 20-nmnode technology NAND Flash cell is presented. In order to suppress the program disturb and the large power consumption, we utilized the self-channel boosting techniques with floated WLn-1, switching SSL, and a sufficiently high local field to cause efficient hot-carrier injection in NAND string. This method has been successfully demonstrated in the 20-nm-node NAND Flash cells, along with comprehensive studies on various bias conditions and algorithm. It would be very attractive for further scaling in NAND Flash memories beyond 20-nm technology.

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