10:45 a.m. 10.2 A 243-GHz FT and 208-GHz F, . , , 90-nm SO1 CMOS SoC Technology with Low-Power Millimeter-Wave Digital and RF Circuit Capability, N. Zamdmer, J. Kim, R. Trzcinski, J.-0. Plouchart, S. Narasimha, M. Khare, L. Wagner and S. Chaloux, iBM SRDC, Hopewell Junction, NY 11:lO a.m. 10.3 Integration of a 90nm RF CMOS Technology (200GHz f , , , -150GHz fT NMOS) Demonstrated by a 5GHz LNA, W.
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