No abstract

Using a computational high‐throughput screening method, 29 doping elements have been investigated for improving the thermal and electrical characteristics of In3SbTe2 (IST) phase‐change material. Among the 29 dopants, it is found that Y offers largest distortion in the lattice structure of IST with negative doping formation energy while Y substitutes the In site. The atomic lattice images clearly show that the In site is substituted by Y and the distortion angles of the Y‐doped IST (Y‐IST) are well matched with the calculated results of density functional theory (DFT). Set/reset speed of the Y‐IST phase‐change memory is faster than IST and Ge2Sb2Te5 (GST) devices, which is strongly related with the fast and stable phase transition due to the larger lattice distortion. The power consumption of the Y‐IST device is also less than a fourth of that of the GST device.

With the upcoming Internet of Things (IoT), low-power devices are becoming mainstream these days. The need for memory elements able to operate at reduced biasing conditions is therefore of utmost importance. In this paper, one of the most promising capacitor-less dynamic RAM cell, the Z 2-FET (zero subthreshold swings, zero impact ionization field-effect transistor), is analyzed through advanced numerical simulations to study its sub-1V operation capabilities. SiGe compounds and tuned workfunction are selected to further reduce the operating voltage to limit energy consumption. The results demonstrate functional SiGe cells with up to 75% energy reduction with respect to identical Si cells.

No abstract

No abstract