BackgroundHighly competitive market in the private hospital industry has caused increasing pressure on them to provide services with higher quality. The aim of this study was to determine the different dimensions of the service quality in the private hospitals of Iran and evaluating the service quality from the patients' perspective.MethodsA cross-sectional study was conducted between October and November 2010 in Tehran, Iran. The study sample was composed of 983 patients randomly selected from 8 private general hospitals. The study questionnaire was the SERVQUAL questionnaire, consisting of 21 items in service quality dimensions.ResultsThe result of factor analysis revealed 3 factors, explaining 69% of the total variance. The total mean score of patients' expectation and perception was 4.91(SD = 0.2) and 4.02(SD = 0.6), respectively. The highest expectation and perception related to the tangibles dimension and the lowest expectation and perception related to the empathy dimension. The differences between perception and expectation were significant (p < 0.001). There was a significant difference between the expectations scores based on gender, education level, and previous hospitalization in that same hospital. Also, there was a significant difference between the perception scores based on insurance coverage, average length of stay, and patients' health conditions on discharge.ConclusionThe results showed that SERVQUAL is a valid, reliable, and flexible instrument to monitor and measure the quality of the services in private hospitals of Iran. Our findings clarified the importance of creating a strong relationship between patients and the hospital practitioners/personnel and the need for hospital staff to be responsive, credible, and empathetic when dealing with patients.

We report a first-principles study on the elastic, vibrational, and electronic properties of the recently synthesized phosphorene. By calculating the Grüneisen parameters, we evaluate the frequency shift of the Raman and infrared active modes via symmetric biaxial strain. We also study a strain-induced semiconductor-metal transition, the gap size, and the effective mass of carriers in various strain configurations. Furthermore, we unfold the emergence of a peculiar Dirac-shaped dispersion for specific strain conditions including the zigzag-oriented tensile strain. The observed linear energy spectrum has distinct velocities corresponding to each of its linear branches and is limited to the -X direction in the first Brillouin zone.

Hydrogen is a potentially important source of n-type conductivity in oxide materials. We have investigated hydrogen in tin oxide ͑SnO 2 ͒, a wide-band-gap semiconductor with applications as a transparent conductor and in gas sensors. Infrared ͑IR͒ spectroscopy and electrical measurements indicate that hydrogen binds to a host oxygen atom and increases the conductivity. First-principles calculations confirm that interstitial hydrogen acts as a shallow donor ͑H i + ͒. Our calculations also indicate that H i + diffuses easily and combines with Sn vacancies into stable ͑V Sn-H͒ −3 complexes, with the calculated O-H frequencies in agreement with the experimental values. These results suggest that interstitial hydrogen acts as a shallow, mobile donor in a range of oxide materials.

Often, during fabrication processes of fiber-matrix composites, the pertinent interface may be made imperfectly bonded either deliberately or undesirably. The effect of electric capacitors and mechanical imperfections on the electro-mechanical fields associated with an anisotropic piezoelectric matrix containing a cylindrical inhomogeneity made of a different anisotropic piezoelectric material is of interest. In fact the interface imperfection condition presented in this paper is quite general, in the sense that any combination of mechanical and electrical imperfections may exist. The interface electrical imperfection is mimicked by the electric capacitors. The capacity of the capacitors is a measure of the electrical imperfection. The notion of complete electric barrier realizes when the capacity is equal to zero. For finite values of capacity, different electrical imperfections are modeled. When the capacity is infinitely large, perfect electrical interface reveals.

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