We offer to use an amorphous metal alloy Al 80 Ni 20 as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data of the X-ray structure analysis of the metal alloy Al 80 Ni 20 confirming amorphism were obtained. The key PC parameters are determined.
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