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2. In surface reaction rate.limiting deposition, which occurred at chuck temperatures below 550~ a W-rich amorphous layer is formed at the interface with the Si substrate. Thi~ layer is nucleated by the surface reaction of WF~ with Si. Nonuniform, in.depth Si composition profiles become more uniform with increase of deposition temperature.3, The nucleated layers on Si by the surface reaction are amorphous with the Si composition, x, below 2.0. These results indicate that control of the surface reaction is needed to deposit films with a uniform composition profile.

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