Family support plays the most important role among assaulted psychiatric ward nurses as a protective factor against developing depressive symptoms in this study.

The purpose was to examine the effectiveness of an exercise programme for elders with dementia in Taiwan aimed to maintain their activities of daily living such as feeding, dressing, grooming, washing and toileting. This was a single study group, repeated measure research design. Twenty-six dementia elders were recruited from a day-care centre located in southern Taiwan. Caregivers of the day-care centre provided all subjects an exercise programme. The exercise programme consisted of stretching and walking five times per week, and leg-weight bearing at least three times per week for 20-30 min each. The data were obtained three times (baseline, 2 months post intervention and 4 months post intervention). Results showed slight changes in the scores of one-leg-standing, 30 s chair rise, functional reach and get up and go test but were not statistically significant. Results also indicated that scores in the performance of activities of daily living were significantly higher than at baseline and at 4 months post intervention. In conclusion, this study provides information for dementia day-care centres in Taiwan about how elders with dementia can maintain physical fitness and perform activities of daily living.

In this work, carbon-added tungsten ͑W 1−x C x , x ഛ 0.19͒ and thin carbon layer-inserted tungsten ͑W top /C/W bottom , the thickness of W bottom is set to be 2 nm and 10 nm͒ gate stacks are deposited on SiO 2 /Si to fabricate metal-oxide-semiconductor capacitors. Grazing incident angle X-ray diffraction reveals that the W 1−x C x films become amorphous when the concentration of added C is lower than 16 atom %. However, when the C concentration is as high as 19 atom %, a trace of ␥ phase of tungsten carbide phase appears in the W 0.81 C 0.19 film. No interdiffusion between C-added W and SiO 2 is observed by Auger electron spectroscopy depth profiling. The resistivity of W, W 0.88 C 0.12 , W 0.84 C 0.16 , and W 0.81 C 0.19 are 132, 151, 163, and 337 ⍀ cm, respectively. The work function of W 0.81 C 0.19 , W 0.84 C 0.16 , W 0.88 C 0.12 , W, W/C/W ͑10 nm͒, and W/C/W ͑2 nm͒ on SiO 2 are 4. 82, 4.75, 4.73, 4.66, 4.52, and 4.32 eV, respectively. The C-related dipole shows apparent influence on the work function. The leakage current densities of C-added W films are smaller than 2 ϫ 10 −5 A/cm 2 in the range from 0 to 5 ϫ 10 7 V/cm. No significant influence of these gate electrodes on the fixed oxide charge and the leakage behavior of SiO 2 are observed.

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