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The optical properties of porous SiGe/Si multilayer films prepared through electrochemical anodization have been investigated. The visible luminescence spectra with multiple emission peaks have been detected in the temperature range from 10 K to room temperature. Photoluminescence (PL) with narrow band width is observed due to the wavelength selective effect of the microcavity. The resonance of the microcavity is confirmed by the temperature dependent PL measurement and the reflectance spectrum, which is consisted with the prediction from the thermo-optic effect.

SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.