This paper presents a novel single-ended disturb-free 9T subthreshold SRAM cell with cross-point data-aware Write word-line structure. The disturb-free feature facilitates bit-interleaving architecture, which can reduce multiple-bit upsets in a single word and enhance soft error immunity by employing Error Checking and Correction (ECC) technique. The proposed 9T SRAM cell is demonstrated by a 72 Kb SRAM macro with a Negative Bit-Line (NBL) Write-assist and an adaptive Read operation timing tracing circuit implemented in 65 nm low-leakage CMOS technology. Measured full Read and Write functionality is error free with V down to 0.35 V ( 0.15 V lower than the threshold voltage) with 229 KHz frequency and 4.05 µW power. Data is held down to 0.275 V with 2.29 µW Standby power. The minimum energy per operation is 4.5 pJ at 0.5 V. The 72 Kb SRAM macro has wide operation range from 1.2 V down to 0.35 V, with operating frequency of around 200 MHz for V around/above 1.0 V. Index Terms-Low power, low voltage, negative bit-line (BL), subthreshold SRAM cell, timing tracing.

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Abstract-An LDPC decoder chip fully compliant to IEEE 802.16e applications is presented. Since the parity check matrix can be decomposed into sub-matrices which are either a zero-matrix or a cyclic shifted matrix, a phase-overlapping message passing scheme is applied to update messages immediately, leading to enhance decoding throughput. With only one shifter-based permutation structure, a self-routing switch network is proposed to merge 19 different sub-matrix sizes as defined in IEEE 802.16e and enable parallel message to be routed without congestion. Fabricated in the 90 nm 1P9M CMOS process, this chip achieves 105 Mb/s at 20 iterations while decoding the rate-5/6 2304-bit code at 150 MHz operation frequency. To meet the maximum data rate in IEEE 802.16e, this chip operates at 109 MHz frequency and dissipates 186 mW at 1.0 V supply.

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