Hexagonal ZnO nanorod arrays have been prepared by a simple low-temperature ZnO-nanocrystal-assisted hydrothermal method. The photoluminescence spectrum of the ZnO nanorods features a weak band-edge emission at λmax∼3.3eV and a strong broad yellow emission at λmax∼2.17eV. Unlike the conventional reported n-type semiconducting property, our ZnO nanorods exhibit ambipolar charge transporting behavior. Using bottom contact field-effect transistor structure, the ZnO nanorods exhibit electron and hole mobilities up to 3.2 and 2.1cm2V−1s−1, respectively. Electroluminescence in the visible region from the nanorod-based device has also been demonstrated.

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