Over the past decade, the field of nanotechnology has expanded, and the most heavily used nanoscale characterization/imaging techniques have been scanning probe microscopy (SPM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although these high-resolution imaging techniques help visualize nanostructures, it is essential to understand the chemical nature of these materials and their growth mechanisms. Surface modifications in the first few nanometers can alter the bulk properties of these nanostructures, and conventional characterization techniques, including energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) associated with SEM and TEM are not suited to detecting these surface modifications except in special, favorable specimens. A modern state-of-the-art scanning Auger electron spectroscopy (AES) instrument provides valuable elemental and chemical characterization of nanostructures with a lateral spatial resolution better than 10 nm and a depth resolution of a few nm. In this article we review the technique of scanning AES and highlight its unique analytical capabilities in the areas of nanotechnology, metallurgy, and semiconductors.
The field of nanotechnology has expanded with advances in high resolution imaging. Though these high resolution imaging techniques help one visualize these nano-structures, it is essential to understand the chemical nature of these materials and their growth mechanisms. Surface modifications can alter the bulk properties of these nanostructures and conventional characterization techniques associated with imaging systems are not capable of detecting these changes. Modern state of the art Scanning Auger Microscopy systems provide valuable elemental and chemical characterization for these structures with a spatial resolution better than 10 nm and depth resolutions of a few nm. In this presentation we will review some unique features of the Scanning Auger Microscopy technique and highlight their applications in characterizing elemental and chemical structures in the areas of nanotechnology, metallurgy and semiconductors in conjunction with traditional microscopy techniques such as FIB cross section sample preparation.
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