The present study was undertaken to examine the structure and performance of hetero junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual-junction solar cell. This goal of this work was to reduce recombination in the bottom cell so that the electrons and holes produced in the top cell with the lowest recombination participate in the output current. Semiconductors with a high bandwidth from the ѵш group were studied in order to obtain a high open circuit voltage. By observing mobility and lattice constant semiconductors (Al 0.52 In 0.48 P, GaAs and In 0. 49 Ga 0. 51 P), it was concluded that the semiconductor Al 0.52 In 0.48 P has high electron mobility and hole mobility and that the lattice constant matched to the GaAs semiconductor can be effective in reducing recombination. The cathode current and absorbed photons show that the composition InGaP/AlInP increased the number of charge carriers in the top cell. The structure of InGaP-AlInP/GaAs-AlInP was obtained by inserting an InGaP-AlInP heterojunction at the top and GaAs-AlInP heterojunction at the bottom of aInGaP/GaAs dual-junction cell. For this structure, short circuit current (J SC) = 22.96 mA/cm 2 , open circuit voltage (Voc) = 2.72 V, fill factor (FF) = 93.26% and efficiency(η)= 58.28% were obtained under AM1.5 (1 sun) of radiation.