Sample orientations. Magnetoresistance coef ficients were measured along <ÏÏ2>, 45°, <111> and 135° directions. Constant energy ellipsoids for a many valley semiconductor. Method for growth of single crystals of MggGe. Orientations of a magnetoresistance sample. Orientation of single crystals. 34b Arrangement of the probes attached to the sam ple. Probes 1 and 2 are current probes, 3 and 4 are for resistance and magnetoresistance measurements, and 3, 4, and 5 are for Hall voltage measurements. Sample holder with spring contact probes. Modified sample holder with resistance probe distance of 1.27 mm. Overall view of sample holder. Two teflon wheels guide the sample holder in an axial rotation. 42 Block diagram of the magnetoresistance apparatus. Measurement of Hall voltage.

Sample orientations. Magnetoresistance coef ficients were measured along <ÏÏ2>, 45°, <111> and 135° directions. Constant energy ellipsoids for a many valley semiconductor. Method for growth of single crystals of MggGe. Orientations of a magnetoresistance sample. Orientation of single crystals. 34b Arrangement of the probes attached to the sam ple. Probes 1 and 2 are current probes, 3 and 4 are for resistance and magnetoresistance measurements, and 3, 4, and 5 are for Hall voltage measurements. Sample holder with spring contact probes. Modified sample holder with resistance probe distance of 1.27 mm. Overall view of sample holder. Two teflon wheels guide the sample holder in an axial rotation. 42 Block diagram of the magnetoresistance apparatus. Measurement of Hall voltage.