High pixel temperatures for IR scene projector arrays face materials challenges of oxidation, diffusion, and recrystallization. For cost effective development of new high-temperature materials, we have designed and fabricated simplified pixels for testing. These consist of resistive elements, traces, and bond pads sandwiched between dielectric layers on Si wafers. Processing involves a pad exposure etch, a pixel outline etch, and an undercut etch to thermally isolate the resistive element from the substrate. Test pixels were successfully fabricated by electron-beam lithography using a combination of wet and dry etching.