Generation of terahertz radiation by bulk and surface optical rectification from Generation of terahertz radiation by bulk and surface optical rectification from crystal planes of arbitrary orientation crystal planes of arbitrary orientation

This letter shows that intrinsic hydrogenated amorphous silicon (a‐Si:H) films deposited by RF magnetron sputtering can provide outstanding passivation of crystalline silicon surfaces, similar to that achieved by plasma enhanced chemical vapour deposition (PECVD). By using a 2% hydrogen and 98% argon gas mixture as the plasma source, 1.5 Ω cm n‐type FZ silicon wafers coated with sputtered a‐Si:H films achieved an effective lifetime of 3.5 ms, comparable to the 3 ms achieved by PECVD (RF and microwave dual‐mode). This is despite the fact that Fourier transform infrared spectroscopy measurements show that sputtering and PECVD deposited films have very different chemical bonding configurations. We have found that film thickness and deposition temperature have a significant impact on the passivation results. Self‐annealing and hydrogen plasma treatment during deposition are likely driving forces for the observed changes in surface passivation. These experimental results open the way for the application of sputtered a‐Si:H to silicon heterojunction solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Nanoporous honeycomb membranes on InP (111) surfaces emit ultrafast coherent terahertz pulses under near-infrared optical excitation. Irradiating the membranes with heavy noble gas Kr or Xe ions enhances the terahertz emission. The emission does not vary with in-plane magnetic field rotation and exhibits three-cycle dependence on azimuthal-angle rotation. Both suggest the terahertz source is not transient currents but optical rectification enhanced by the heavy-ion irradiation.

The role of optical rectification in the generation of terahertz radiation from The role of optical rectification in the generation of terahertz radiation from GaBiAs GaBiAs

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