Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting Si(x)Ge(1-x) alloy nanowires is controlled by the vapor phase composition of Ge.