We fabricated oxidized porous polysilicon (OPPS) field emitters and investigated their field emission characteristics using a Ti=Pt multi-layer electrode of different thicknesses and OPPS emitters, which were patterned in a 7 Â 7 array. Each unit pixel of the 7 Â 7 array OPPS on the field emitter, with a structure of Pt=OPPS= n-type Si, was in operation and their field emission characteristics were investigated using a thermal oxidation process with a Ti=Pt multi-layer electrode. A non-doped polysilicon layer 1.75 mm is deposited on a heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol in a 1:1 ratio. The Ti=Pt multi-layer electrodes were formed with different thicknesses using a DC sputter. The achieved higher emission efficiency of the Ti=Pt electrode, with thickness of 2 nm=7 nm was 1.57% at V ps ¼ 20 V. The investigated field emission characteristics of the unit pixel also demonstrated good uniformity.