Heterojuncton Ge,Si,-, /Si internal photoemission infrared detectors exhibiting nearly ideal thermionicemission dark-current Characteristics have been fabricated with cutoff wavelengths out to 16 bm. High-quality imaging without uniformity correction has been demonstrated in the long-wavelength infrared spectral band for 400 x 400-element focal plane arrays consisting of Ge,,Si,, /Si detectors with a cutoff wavelength of 9.3 pm and monolithic CCD readout circuitry. CAVITY TRANSFER RING CCDCHANNELT D SI

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