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We show that the insertion of ultra thin layers of barrier material in InGaAs quantum wells allows separate control of the working wavelength, barrier height and quantum well thickness in InGaAs-AlGaInAs quantum well electroabsorption modulators, resulting in a drastic improvement of the overall performances of these devices.

We report on the observation of anisotropy of the propagation index with respect to propagation direction in planar waveguides containing InGaAs–InP quantum wells. We discuss the relation between this effect and the recently discovered in-plane polarization anisotropy of the absorption observed for light propagating along the growth axis.