No abstract

No abstract

We have identified a Mn-rich layer on the surface on (Ga,Mn)As thin films which significantly influences soft x-ray absorption measurements. The Mn L3,2 x-ray absorption spectra of the untreated films show a strong multiplet structure, consistent with earlier observations and characteristic of MnO. After removal of the surface layer, the multiplet structure is less pronounced and the spectrum is shifted to ∼0.5 eV lower photon energy. Comparison with calculated spectra imply a localized Mn ground state for the untreated sample and a hybridized ground state after etching. In addition, a large x-ray magnetic circular dichroism is observed at the Mn L3,2 edge in the etched film. These results may explain several peculiarities of previously reported x-ray absorption studies from (Ga,Mn)As.

We report on a comprehensive study of the ferromagnetic moment per Mn atom in ͑Ga,Mn͒As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k · p model for hole states, we evaluate the zerotemperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of ͑Ga,Mn͒As semiconductors with nominal Mn doping ranging from ϳ2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality ͑Ga,Mn͒As materials have nearly parallel ground state alignment.

No abstract