A stable fluorosilicate glass (FSG) has been fabricated from the chemical vapor deposition of SiF4/tetraethylorthosilicate (TEOS)/02 and C2FjrEOS/02. Films were subjected to a temperature and humidity stress for water absorption studies and were thermally stressed for fluorine diffusion studies. Fourier transform infrared spectrometry (FTIR) and secondary ion mass spectrometry (SIMS) indicate films produced from SiF4 absorb less water and diffuse less fluorine into SIO than films produced from C2F6. The activation energies of fluorine diffusion were calculated to be 1.00 and 0.82 eV for SiF4 and C2F9 FSG, respectively.
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