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A novel micro optical diffusion sensor device has been developed, which enables high-speed measurement with a small sample volume and on-site sensing and without using any additives.

AbstructIn this paper, we present a IOGbase Ethernet Transceiver that is suitable for the IOGbit Ethernet applications. The 10Gbase Ethernet Transceiver LSI, which contains the high-speed interface and the fully integrated IEEE 802.3ae compliant logics, is fabricated in a 0.1 gum SOYCMOS process and dissipates about 2.9W at 1.8V supply. By incorporating the monolithic approach and the use of the advance CMOS process, this lOGE transceiver realizes the low power, low cost and compact solutions for the exponential need of broadband network applications. IntroductionThe Ethernet protocol dominates the LANs and is the basis of the Internet Protocol (IP). In the near future, the 1 OGbps Ethernet can unify the network protocols among LAN, MAN and WAN. This unification can lower the total cost of the network and can achieve highly effective communication systems.1 OGbps SDWSONET is now used predominantly by the high performance electro-optical-interface (EOI) functions such as WAN applications. In the mid 90's. GaAs and InP were the only possible solutions for such high performance devices. Now owing to the progress of technology, the SiGe or BiCMOS devices are reported for such applications [l]. Although the SiGe devices have a good performance and low power characteristics, the CMOS technology seems to be superior in implementing highly integrated LSIs. In addition, the advance CMOS transistor is able to achieve cutoff frequency higher than 40GHz [2], and is suitable for 1 OGbps transceiver LSIs.In this paper, we present a lOGbase Ethernet transceiver design based on 0.18um SOVCMOS technology. This paper is divided into three sections. First, we will show the block diagram of the chip and the clocking strategies. Next, we illustrate the interface circuits including the timing recovery circuits in detail. The measurement results are shown in the last section.

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