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Good bonding of single-crystal semiconductor thin-film (epifilm) on diamond-like carbon (DLC) thin film formed on the Si substrate (DLC/Si) by intermolecular force at room temperature has been achieved for the first time. Characteristics of super high-density epifilm-LED arrays bonded on DLC/Si are compared with those bonded on polyimide film on the Si substrate (PI/Si). Performance test showed much larger emitted-light-power efficiencies on DLC/Si than those on PI/Si in the larger current-density range. The current-power characteristic curve of the epifilm-LED bonded on DLC/Si was found to saturate at much larger LED-current compared to conventional LEDs on the GaAs substrate. The epifilm-LED on DLC/Si achieved much larger heat-dissipation and higher emitted-light-powers at larger LED-currents.

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