No abstract

Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm2 has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3×104 cm−2.

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Effects of annealing at 1173 K, that is comparable to the typical temperatures for the fabrication of Si-based devices, on the dissociated dislocations in Czochralski-grown silicon crystals heavily doped with phosphorus atoms were determined. Dislocation segments with edge component are constricted. They climbed out of the slip plane toward the compression side, forming complete dislocation segments. The dissociation width of the rest segments is increased. These results suggest that phosphorus atoms segregate nearby dislocations and the high doping level at the dislocations lowers the formation energy of negatively charged vacancies.

No abstract