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The 2,6-naphthoquinodimethane (2,6-NQDM) containing Sheterocyclic molecule 6-S was synthesized, and its dual open-shell diradical and dipolar characters were revealed via both experimental and theoretical studies. Unlike the shorter p-quinodimethane (p-QDM)-containing analogue 5-S, which possesses a closed-shell ground state (y 0 = 0%) with small dipolar character, 6-S possesses enhanced dipolar character with a singlet diradical ground state (y 0 = 23.3%) and a thermally accessible triplet excited state (ΔE ST = −4.13 kcal/mol). Despite this, it displays good stability (t 1/2 = 41days) under ambient air and light conditions due to its distinctive dipolar character and kinetic blocking of reactive sites.

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The spatial spread of interface states generated by hot-electron effect in the nMOSFET is shown to be significantly increased by self-heating. Substantial generation of interface states in the channel region of the wide-channel strained-Si/SiGe nMOSFET, which suffers from significant self-heating, is observed at a very short stress time. The initial spread of the interface damage is significantly reduced in the narrow-channel strained-Si device, which exhibits a much lesser degree of self-heating. Evidence suggests that the increased spread in the spatial distribution of the interface damage is due to a small fraction of excess "superhot" electrons, which have gained additional energy from phonon absorption.Index Terms-Channel temperature, high-energy tail electrons, hot-carrier effect, strained-Si/SiGe heterostructure.

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