A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and output return losses more than 10 dB were obtained at both 2.4 and 5.2 GHz. In addition, IIP3 of 17 and 5 dBm were achieved at 2.4 and 5.2 GHz, respectively. No off‐chip components were required for input and output matching. To our knowledge, this LNA exhibits a state‐of‐the‐art performance. Due to the careful selection of the size of the transistors and the passive elements in our proposed method power matching and noise matching can be achieved simultaneously at the dual‐band of interest. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 287–292, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20280

In this study, we introduce a zero-IF sub-harmonic mixer with high isolation in the 5 GHz band using 0.18 µm CMOS technology. Placing an LC-Tank between the class AB stage and the mixer core improves the isolation between the LO to RF at low supply voltage. The measured isolation is 48 dB between the LO and RF ports, and the 9.5 dB conversion gain is achieved with a supply voltage of 7 mA at 2.5 V. In order to alleviate the degradation of linearity due to the high conversion gain, we adopt the class AB stage as RF input stage. The measured IIP 3 is −7.5 dBm.

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