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Manganese oxide films for lithium secondary batteries were prepared using a reactive evaporation method. The Mn metal in the crucible suffers severe oxidation during the reactive evaporation process, which deteriorates it's deposition rate with increasing deposition run. It is also difficult to maintain the stoichiometry of films from run to run. This paper shows a new technique which keeps off the Mn evaporant from oxygen atmosphere during the reactive evaporation process. To achieve it a stainless steel cell has been installed in the bottom of the Mn crucible, which can successfully isolate Mn evaporant from incoming oxygen atoms. It improves the reproducibility of film composition because of stabilizing of the deposition rate.

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The aim of this review is to present the observation of low-energy ion implanted SiC and annealing them by using TEM. By detail analyses of the TEM images and results of SRIM, ion implanted SiC was classification four structure depending on the ion concentration in a few ten nm shallow region. This results suggest that crystal structure in a few nm shallow region can be controled by concentration of the ion implant. And SiC was re-crystallized single poly-type after annealed at 1500°C. But, defects in end of amorphous region affect to recover the damaged structure .