The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX L and EX U ) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures.

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The 80-mm-diameter ZnTe single crystals were successfully obtained by the liquid-encapsulated Kyropoulos (LEK) method. Both Ͻ100Ͼ-and Ͻ110Ͼ-oriented single crystals were reproducibly grown by using ZnTe seed crystals. Furthermore, 80-mm-diameter, Ͻ100Ͼ and Ͻ110Ͼ ZnTe single crystals were obtained by the pulling method. The etch pit densities (EPDs) of the grown crystals by the LEK and pulling methods were lower than 10,000 cm Ϫ2 . The strain in the grown crystals by the pulling method was lower than that of LEK crystals.

Thermal analysis of projection electron beam lithography using complementary mask exposuresProximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.The block exposure column has a mask with one hundred stencils in a deflection area. Each mask pattern projected by electron beams is reduced in size to 1/60th and imaged onto a wafer. Deviations in image shapes are dependent on deflected beam trajectories and imaging beam currents. We show techniques to measure the image shapes using reflected electron signals. Correction methods are proposed to reduce the deviations. After the corrections, the block exposure can expose images of every mask pattern of the size 5ϫ5 m with the image size deviation less than 11 nm, which includes 5.8 nm of an isotropic expansion and 9.6 nm of distortions.