The influence of molecular planarity on field-effect-transistor and photovoltaic cell performance in thienoisoindigo derivatives has been studied.

Luminescence during the cathodization of silicon and other materials was observed. In the cathodization of silicon in 0.04N KNOJethylene glycol, the luminescence was found only when the oxide film was thin. It was observed that the cathodization of silicon resulted in removal of the oxide film. However, in the presence of water, the luminescence occurred without any requiremen.t of an oxide layer.

Bei wiederholten Anodisierungs‐Kathodi‐ sierungszyklen von Si (auch Al, Cu, Zn u.a.) in O,04n KNO3/Äthylenglykol‐Lösung wird nicht nur während der Anodisierung sondern auch während der Kathodisierungsphase Lumineszenz (schwach) beobachtet.