Non‐crystalline anthracene‐containing binaphthol chromophores were synthesized, characterized, and used in the fabrication of organic light‐emitting diodes (OLEDs). Specifically, the target molecules were 2,2′‐dihexyloxy‐1,1′‐binaphthol‐6,6′‐bisanthracene (BA1) and 2,2′‐dimethoxyy‐1,1′‐binaphthol‐6,6′‐bisanthracene (BA2). Molecules BA1 and BA2 provide amorphous solids, as determined by their glass‐transition temperature (Tg) measured by differential scanning calorimetry (DSC). Efficient multilayer OLEDs containing BA1 and BA2 were fabricated by evaporation techniques. Differences in the electroluminescence frequencies of these devices suggests that the degree of alkoxide substitution controls the mobility within the binaphthol material, and therefore the recombination region in the device. Compound BA2 can also be used to dope CBP ((4,4′‐bis(carbazol‐9‐yl)biphenyl)) in the fabrication of highly efficient OLEDs.

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Today ArF immersion processes are widely applied for advanced device manufacturing. ArF immersion lithography enables 4x nm half-pitch (hp) lithography. The use of double patterning extends immersion to 2x nm hp lithography. New materials for such 193nm lithography extensions are widely needed, especially for post-193nm immersion lithography technology. In this paper, we report a slimming material that makes line patterns smaller and it succeeds in forming 20nm lines.In another study, we examined a new hydrophilic lactone to improve line width roughness (LWR) and defectivity. First, we studied the lactone reactivity with developer and its behavior during development. Then we verified its line width LWR performance and defectivity. When the hydrophilic new lactone is used in a photoresist, an improvement in LWR and defectivity photoresist was observed. This is very useful progress, especially in combination with processes such as multiple patterning to extend ArF immersion to sub-20nm hp dimensions.

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