Sb-Te and Bi-Te compounds are key components of thermoelectric or phase change recording devices. These two binary systems form commensurately/incommensurately modulated long-period layer stacking structures known as homologous phases that comprise discrete intermetallic compounds and X phases. In the latter, the homologous structures are not discrete but rather appear continuously with varying stacking periods that depend on the binary composition. However, the regions over which these X phases exist have not yet been clarified. In this study, precise synchrotron X-ray diffraction analyses of various specimens were conducted. The results demonstrate that the X phase regions are located between Sb 20 Te 3 and Sb 5 Te 6 in the Sb-Te system and between Bi 8 Te 3 and Bi 4 Te 5 in the Bi-Te system.

No abstract