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We propose a practical optical proximity correction (OPC) system, whose characteristics are simple and effective, for logic LSI circuits and outline all the steps for OPC. We also report the improvement of gate length deviations in a logic device with OPC.

Electron projection lithography mask format layer stress measurement and simulation of pattern transfer distortion J.Electron beam projection lithography ͑EPL͒ has been developed as one of the most promising candidates for the next generation lithography below 70 nm node devices. Stencil masks, which are used in the EPL technology as masks, have brought new necessities of data conversion such as dividing the data into two complementary masks. The patterns have to be divided and dispatched optimally onto each of the complementary masks in order to make the stencil masks manufacturable. We have developed a data conversion system for EPL, called ''EPLON.'' EPLON provides a solution to the problems mentioned and converts the data available on EPL. In this article, our method of converting the complementary mask data is presented.

We have investigated the in£uence of opacity on hydrogen (H-a and Ly-b) and Li-like oxygen emission lines from the EXTRAP T2R reversed ¢eld pinch. We used the Atomic Data Analysis System (AzDAS) based on the escape factor approximation for radiative transfer to calculate metastable and excited population densities via a collisional-radiative model. Population escape factor, emergent escape factor and modi¢ed line pro¢les are plotted vs. optical depth. The simulated emission line ratios in the density/temperature plane are in good agreement with experimental data for electron density and temperature measurements.

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