The development of ultra-low dielectric constant silicon-based materials was reviewed in this article. The dielectric constants of these kinds of mesoporous and microporous materials can be kept at less than 2 by controlling their pore size and pore density. Even though these materials show remarkable electrical breakdown characteristics and leakage currents, they have to surmount mechanistic issues, low resistance to electrical migration, and hydrophilicity. To further enhance material properties and make them compatible with current demands, research into other new synthesis methods is still required.

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