The electrical and dielectric properties of MnO 2 doped and un-doped ZnO-V 2 O 5 ceramics were studied by ac impedance and variable temperature dielectric spectroscopy. The results show that V and Mn ions simultaneously segregated at the grain boundaries to form an intergranular phase, increasing the resistivity of the intervening layer and the Schottky barrier at the grain boundaries, and then improving the varistor performance. An obvious loss peak appeared in all the samples, which means an effective depletion layer has formed. As for the samples sintered at 1,000°C for 2 h, the activation energy of the characteristic relaxation process is about 0.339 eV for 99.5 mol% ZnO ? 0.5 mol% V 2 O 5 and 0.352 eV for 99.0 mol% ZnO ? 0.5 mol% V 2 O 5 ? 0.5 mol% MnO 2 , respectively, which means this relaxation process is associated with oxygen vacancy V O Á .